Si7636DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72768.
Document Number: 72768
S09-0272-Rev. G, 16-Feb-09
www.vishay.com
5
相关PDF资料
SI7655DN-T1-GE3 MOSFET P-CH 20V D-S PPAK 1212
SI7658ADP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7682DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7726DN-T1-GE3 MOSFET N-CH 30V 35A 1212-8
SI7738DP-T1-E3 MOSFET N-CH D-S 150V PPAK 8SOIC
SI7758DP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7802DN-T1-GE3 MOSFET N-CH 250V 1.24A 1212-8
SI7810DN-T1-GE3 MOSFET N-CH D-S 100V 1212-8 PPAK
相关代理商/技术参数
SI7652DP-T1-E3 功能描述:MOSFET 30V 15A 3.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7652DP-T1-GE3 功能描述:MOSFET 30V 15A 3.9W 15.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7655ADN-T1-GE3 制造商:Vishay Siliconix 功能描述:MOSFET P-CHAN 20V D-S 1212-8S
SI7655DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET
SI7655DN-T1-GE3 功能描述:MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7658ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI7658ADP-T1-GE3 功能描述:MOSFET 30V 60A 83W 2.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7658DP-T1-E3 功能描述:MOSFET 30V 60A 104W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube